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| 2SC4081 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – General Purpose Transistor | |||
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2SC4081
TRANSISTOR (NPN)
FEATURES
z Excellent hFE linearity
z Complements the 2A1576A
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
7
150
200
150
-55-150
Units
V
V
V
mA
mW
â
â
SOT-323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=50μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=50μA,IC=0
ICBO
VCB=60V,IE=0
IEBO
hFE(1)
VEB=7V,IC=0
VCE=6V,IC=1mA
VCE(sat) IC=50mA,IB=5mA
fT
VCE=12V,IC=2mA,f=30MHz
Cob
VCB12V,IE=0,f=1MHz
MIN TYP MAX UNIT
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
3.5
pF
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
Q
120-270
BQ
R
180-390
BR
S
270-560
BS
JinYu
semiconductor
www.htsemi.com
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