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| 2SC3930 Datasheet, PDF (1/3 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For high-frequency amplification) | |||
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2SC3930
TRANSISTOR (NPN)
FEATURES
z For high-frequency Amplification Complementary to 2SA1532
z Optimum for RF amplification of FM/AM radios
z High transition frequency fT
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
30
20
5
30
150
150
-55-150
Units
V
V
V
mA
mW
â
â
SOT-323
1.BASE
2.EMITTER
3.COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100μA, IE=0
30
Collector-emitter breakdown voltage
V(BR)CEO IC= 100μA, IB=0
20
Emitter-base breakdown voltage
V(BR)EBO IE= 100μA, IC=0
5
Collector cut-off current
ICBO
VCB=10V,IE=0
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=10V,IC=1mA
70
Transition frequency
VCE=10V,IE=1mA,
fT
150
f=200MHZ
Common emitter reverse transfer
capacitance
VCB=10V,IC=1mA,
Cre
f=10.7MHZ
Noise figure
NF
VCB=10V,IC=1mA, f=5MHz
Reverse transfer impedance
Zrb
VCB=10V,IC=1mA, f=2MHz
TYP
MAX
0.1
0.1
220
UNIT
V
V
V
μA
μA
MHz
1.5
pF
4
dB
50
â¦
CLASSIFICATION OF hFE(1)
Marking
Range
VB
70-140
VC
110-220
JinYu
semiconductor
www.htsemi.com
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