2SC3650 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – High-hFE, Low-Frequency General-Purpose Amp Applications

2SC3650
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
 Small Flat Package
 High DC Current Gain
 Low V_CE(sat)
 Large Current Capacity
APPLICATIONS
 LF Amplifiers, Various Drivers, Muting Circuit
1. BASE
2. COLLECTOR
3. EMITTER
MARKING:CF
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
30
25
15
1.2
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=10µA,IE=0
IC=1mA,IB=0
IE=10µA,IC=0
VCB=20V,IE=0
VEB=10V,IC=0
VCE=5V, IC=500mA
VCE=5V, IC=10mA
IC=500mA,IB=10mA
IC=500mA,IB=10mA
VCE=10V,IC=50mA
VCB=10V, IE=0, f=1MHz
Min Typ
30
25
15
800
600
220
17
Max
0.1
0.1
3200
0.5
1.2
Unit
V
V
V
µA
µA
V
V
MHz
pF
JinYu
semiconductor
www.htsemi.com