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| 2SC3052 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE | |||
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2SC3052
TRANSISTOR (NPN)
FEATURES
SOT-23
z Low collector to emitter saturation voltage
VCE(sat)=0.3V max(@IC=100mA,IB=10mA)
z Excellent linearity of DC forward current gain
MAXIMUM RATINGS (TA=25â unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
50
50
6
0.2
150
125
-55-125
Units
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V (BR) CBO IC = 100 μA, IE=0
50
Collector-emitter breakdown voltage
V (BR) CEO IC = 100 μA, IB=0
50
Emitter-base breakdown voltage
V (BR) EBO IE= 100 μA, IC=0
6
Collector cut-off current
ICBO
VCB= 50 V , IE=0
Emitter cut-off current
IEBO
VEB= 6V , IC=0
DC current gain
hFE(1) VCE= 6V, IC= 1mA
150
hFE(2) VCE= 6V, IC= 0.1mA
50
Collector-emitter saturation voltage
VCE (sat) IC=100mA, IB= 10mA
Base-emitter saturation voltage
VBE (sat) IC= 100mA, IB= 10mA
Transition frequency
fT
VCE= 6V, IC= 10mA
180
Collector output capacitance
Cob
VCE=6V, IE=0, f=1MHz
Noise figure
NF
VCE=6V,IE=-0.1mA, f=1KHz, RG=2Kâ¦
MAX
0.1
0.1
800
UNIT
V
V
V
μA
μA
0.3
V
1
V
MHz
4
pF
15 dB
CLASSIFICATION OF hFE(1)
Rank
E
Range
150~300
Marking
LE
F
250~500
LF
G
400~800
LG
JinYu
semiconductor
www.htsemi.com
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