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| 2SC2884 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) | |||
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2SC2884
TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Small Flat Package
z Complementary to 2SA1204
z High DC Current Gain
APPLICATIONS
z Audio Frequency Amplifier
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
35
30
5
800
500
250
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
IC=1mA,IE=0
IC=10mA,IB=0
IE=1mA,IC=0
VCB=35V,IE=0
VEB=5V,IC=0
VCE=1V, IC=100mA
VCE=1V, IC=700mA
IC=500mA,IB=20mA
VCE=1V, IC=10mA
VCE=5V,IC=10mA
VCB=10V, IE=0, f=1MHz
Min Typ
35
30
5
100
35
0.5
120
13
Max
0.1
0.1
320
0.5
0.8
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF hFE(1)
RANK
O
RANGE
100â200
MARKING
PO1
Y
160â320
PY1
JinYu
semiconductor
www.htsemi.com
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