2SC2859 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER, SWITCHING APPLICATIONS)

2SC2859
TRANSISTOR (NPN)
SOT–23
FEATURES
 Excellent h_FE Linearity
 Switching Applications
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
35
VCEO Collector-Emitter Voltage
30
VEBO Emitter-Base Voltage
5
IC
Collector Current
500
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC=100mA
VCE=6V, IC=400mA
IC=100mA, IB=10mA
VCE=1V,IC=100mA,
VCE=6V,IC=20mA
VCB=6V, IE=0, f=1MHz
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max
35
30
5
0.1
0.1
70
400
25
70
0.25
1
300
7
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF hFE(1), hFE(2)
RANK
RANGE hFE(1)
RANGE hFE(2)
MARKING
O
70–140
25Min
WO
Y
120–240
40Min
WY
GR(G)
200–400
70Min
WG
JinYu
semiconductor
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