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| 2SC2715 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS) | |||
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2SC2715
TRANSISTOR (NPN)
FEATURES
z High Power Gain
z Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
35
30
4
50
350
150
-55-150
Units
V
V
V
mA
mW
â
â
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Power Gain
Symbol
Test conditions
V(BR)CBO IC=10μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=10μA, IC=0
ICBO
VCB=35V, IE=0
IEBO
VEB=4V, IC=0
hFE(1) VCE=12V, IC=2mA
VCE(sat) IC=10mA, IB=1mA
VBE(sat) IC=10mA, IB=1mA
fT
VCE=10V, IC=1mA
Gpe VCE=6V, IC=1mA, f=10.7MHZ
MIN TYP MAX UNIT
35
V
30
V
4
V
0.1 μA
0.1 μA
40
240
0.4 V
1
V
100
400 MHz
27
33
dB
CLASSIFICATION OF hFE(1)
Rank
Range
Marking
R
40-80
RR1
O
70-140
RO1
Y
120-240
RY1
JinYu
semiconductor
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