 English |
|
|
|
|
|
|
|
| 2SC2714 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (HIGH FREQUENCY, FM, RF, MIX, IF AMPLIFIER APPLICATIONS | |||
| |||
|
2SC2714
TRANSISTOR (NPN)
SOT-23
FEATURES
z Small reverse Transfer Capacitance:Cre=0.7pF(typ.)
z Low Noise Figure:NF=2.5dB(typ.) (f=100MHz)
MAXIMUM RATINGS (TA=25â unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
30
4
20
100
125
-55-+125
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Reverse Transfer capacitance
Noise figure
Symbol Test conditions
V(BR)CBO IC=10μA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=10μA,IC=0
ICBO
VCB=18V,IE=0
IEBO
VEB=4V,IC=0
hFE
VCE=6V,IC=1mA
fT
VCE=6V,IC=1mA
Cre
VCB=6V,IE=0,f=1MHz
NF
VCE=6V,Ic=1mA,f=100MHZ
MIN TYP MAX UNIT
40
V
30
V
4
V
0.5
μA
0.5
μA
40
200
550
MHz
0.7
pF
2.5
5
dB
CLASSIFICATION OF hFE
Rank
Range
Marking
R
40-80
QR
O
70-140
QO
Y
100-200
QY
JinYu
semiconductor
www.htsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese