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| 2SC2712 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLFIER APPLICATIONS) | |||
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2SC2712
TRANSISTOR (NPN)
FEATURE
· Low Noise: NF=1 dB (Typ),10dB(MAX)
· Complementary to 2SA1162
MAXIMUM RATINGS (TA=25â unless otherwise noted)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
5
150
150
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Noise Figure
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Marking
LO
Symbol
Test conditions
V(BR)CBO IC= 100μA, IE=0
V(BR)CEO IC=1mA , IB=0
V(BR)EBO IE= 100μA, IC=0
ICBO
VCB= 60 V, IE=0
IEBO
VEB=5V, IC=0
hFE
VCE=6V, IC=2mA
VCE(sat) IC= 100mA, IB=10mA
fT
VCE=10V, IC= 1mA
Cob
VCB=10V, IE=0,f=1 MHz
VCE=6V,IC=0.1mA,f=1kHz,
NF
Rg=10kâ¦
MIN
60
50
5
70
80
Y
120-240
LY
GR
200-400
LG
TYP
0.1
2.0
1.0
MAX
0.1
0.1
700
0.25
3.5
UNIT
V
V
V
μA
μA
V
MHz
pF
10
dB
BL
350-700
LL
JinYu
semiconductor
www.htsemi.com
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