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| 2SC2411 Datasheet, PDF (1/2 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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2SC2411
TRANSISOR(NPN)
SOT-23
FEATURES
z High ICMax.ICMax. = 0.5mA
z Low VCE(sat).Optimal for low voltage operation.
z Complements the 2SA1036
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Collector-Base Voltage
40
V
Collector-Emitter Voltage
32
V
Emitter-Base Voltage
5
V
Collector Current
500
mA
Collector Power Dissipation
200
mW
Junction Temperature
150
â
Storage Temperature
-55-150
â
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
32
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
Collector cut-off current
ICBO
VCB=20V,IE=0
Emitter cut-off current
IEBO
VEB=4V,IC=0
DC current gain
hFE
VCE=3V,IC=100mA
82
Collector-emitter saturation voltage
VCE(sat) IC=500mA,IB=50mA
Transition frequency
fT
VCE=5V,IC=20mA,f=100MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
TYP
250
6.0
MAX UNIT
V
V
V
1
μA
1
μA
390
0.4 V
MHz
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
CP
Q
120-270
CQ
R
180-390
CR
JinYu
semiconductor
www.htsemi.com
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