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| 2SC1766 Datasheet, PDF (1/1 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN) | |||
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2SC1766
TRANSISTOR(NPN)
SOT-89-3L
FEATURES
z Small Flat Package
z High Speed Switching Time
z Low Collector-emitter saturation voltage
APPLICATIONS
z Power Amplifier
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
50
5
2
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)*
VCE(sat)
VBE(sat)
fT
Test conditions
IC=100µA,IE=0
IC=1mA,IB=0
IE=100µA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=1A,IB=50mA
IC=1A,IB=50mA
VCE=2V,IC=0.5A,f=100MHz
Min Typ
50
50
5
70
20
120
Max
0.1
0.1
240
0.5
1.2
Unit
V
V
V
µA
µA
V
V
MHz
CLASSIFICATION OF hFE(1)
RANK
P
RANGE
82â180
MARKING
P1766
*Pulse test: pulse width â¤300μs, duty cycle⤠2.0%.
Q
120â270
Q1766
Y
180â390
Y1766
JinYu
semiconductor
www.htsemi.com
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