2SC1654 Datasheet, PDF (1/1 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

2SC1654
TRANSISTOR(NPN)
FEATURES
 High Frequency Power Amplifier Application
 Power Swithing Applications
SOT–23
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
180
VCEO Collector-Emitter Voltage
160
VEBO Emitter-Base Voltage
5
IC
Collector Current
50
PC
Collector Power Dissipation
150
RΘJA Thermal Resistance From Junction To Ambient
833
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Cob
Test conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=130V, IE=0
VEB=5V, IC=0
VCE=3V, IC=15mA
VCE=3V, IC=1mA
IC=50mA, IB=5mA
IC=50mA, IB=5mA
VCE=10V,IC=10mA
VCB=10V, IE=0, f=1MHz
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max
180
160
5
0.1
0.1
90
400
70
0.3
1
120
2.3
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF hFE(1)
RANK
RANGE
MARKING
N5
90–180
N5
N6
135–270
N6
N7
200–400
N7
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semiconductor
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