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| 2SB766A Datasheet, PDF (1/2 Pages) Unisonic Technologies – LOW FREQUENCY OUTPUT AMPLIFICATION | |||
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2SB7 66A
TRANSISTOR(PNP)
SOT-89
FEATURES
z Large collector power dissipation PC
z Complementary to 2SD874A
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic=-10μA,IE=0
-60
Collector-emitter breakdown voltage
V(BR)CEO Ic=-2mA,IB=0
-50
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA,IC=0
-5
Collector cut-off current
ICBO
VCB=-20V,IE=0
Emitter cut-off current
IEBO
VEB=-4V,IC=0
DC current gain
hFE(1) VCE=-10V,IC=-500mA
85
hFE(2) VCE=-5V,IC=-1A
50
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
VBE(sat)
fT
Cob
IC=-500mA,IB=-50mA
VCE=-10V,IC=-50mA,f=200MHz
VCB=-10V,IE=0,f=1MHz
TYP
-0.2
-0.85
200
20
MAX
-0.1
-0.1
340
UNIT
V
V
V
μA
μA
-0.4
V
-1.2
V
MHz
30
pF
CLASSIFICATION OF hFE(1)
Rank
Range
MAKING
Q
85-170
BQ
R
120-240
BR
S
170-340
BS
JinYu
semiconductor
www.htsemi.com
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