2SB1424 Datasheet, PDF (1/1 Pages) Rohm – Low Vce(sat) Transistor (-20V, -3A)

2SB1 424
TRANSISTOR(PNP)
SOT-89-3L
FEATURES
 Excellent DC Current Gain
 Low Collector-emitter saturation voltage
 Complement the 2SD2150
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-20
-20
-6
-3
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-50µA,IE=0
-20
V
V(BR)CEO IC=-1mA,IB=0
-20
V
V(BR)EBO IE=-50µA,IC=0
-6
V
ICBO
VCB=-20V,IE=0
-0.1
µA
IEBO
VEB=-5V,IC=0
-0.1
µA
hFE
VCE=-2V, IC=-0.1A
120
390
VCE(sat) IC=-2A,IB=-0.1A
-0.5
V
Cob
VCB=-10V,IE=0, f=1MHz
35
pF
VCE=-2V,IC=-0.5A,
fT
f=100MHz
240
MHz
CLASSIFICATION OF h_FE
RANK
Q
RANGE
120–270
MARKING
AEQ
R
180–390
AER
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semiconductor
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