2SB1386 Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor(-20V,-5A)

2SB1 38 6
TRANSISTOR(PNP)
FEATURES
z Low collector saturation voltage,
z Execllent current-to-gain characteristics
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-30
-20
-6
-5
0.5
150
-55-150
Units
V
V
V
A
W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-50μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-50μA,I_C=0
I_CBO
V_CB=-20V,I_E=0
I_EBO
V_EB=-5V,I_C=0
h_FE
V_CE=-2V,I_C=-500mA
V_CE(sat) I_C=-4A,I_B=-100mA
f_T
V_CE=-6V,I_C=-50mA,f=30MHz
C_ob
V_CB=-20V,I_E=0,f=1MHz
MIN TYP MAX UNIT
-30
V
-20
V
-6
V
-0.5
μA
-0.5
μA
82
390
-1
V
120
MHz
60
pF
CLASSIFICATION OF h_FE
Rank
P
Range
82-180
Marking
BHP
Q
120-270
BHQ
R
180-390
BHR
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