2SB1260 Datasheet, PDF (1/1 Pages) Rohm – Power Transistor

2SB1 260
TRANSISTOR(PNP)
SOT-89-3L
FEATURES
z Power Transistor
z High Voltage and Current
z Low Collector-emitter saturation voltage
z Complements the 2SD1898
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-80
-80
-5
-1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V_(BR)CBO I_C=-50µA,I_E=0
-80
V
V_(BR)CEO I_C=-1mA,I_B=0
-80
V
V_(BR)EBO I_E=-50µA,I_C=0
-5
V
I_CBO
V_CB=-60V,I_E=0
-1
µA
I_EBO
V_EB=-4V,I_C=0
-1
µA
h_FE
V_CE=-3V, I_C=-0.1A
82
390
V_CE(sat) I_C=-500mA,I_B=-50mA
-0.4
V
C_ob
V_CB=-10V,I_E=0, f=1MHz
25
pF
VCE=-5V,IC=-50mA,
f_T
f=30MHz
100
MHz
CLASSIFICATION OF h_FE
RANK
P
RANGE
82–180
MARKING
Q
120–270
ZL
R
180–390
JinYu
semiconductor
www.htsemi.com