2SB1188 Datasheet, PDF (1/2 Pages) Rohm – Medium power Transistor(-32V, -2A)

2SB1 1 8 8
TRANSISTOR(PNP)
SOT-89
FEATURES
1. BASE
z Low VCE(sat).
z Complements the 2SD1766
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
2. COLLECTOR1
2
3. EMITTER
3
V_CBO
Collector-Base Voltage
-40
V
V_CEO
Collector-Emitter Voltage
-32
V
V_EBO
Emitter-Base Voltage
-5
V
I_C
Collector Current -Continuous
-2
A
P_C
Collector Power Dissipation
T_J
Junction Temperature
T_stg
Storage Temperature
500
mW
150
℃
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V_(BR)CBO I_C=-50μA , I_E=0
-40
V
Collector-emitter breakdown voltage
V_(BR)CEO I_C= -1mA , I_B=0
-32
V
Emitter-base breakdown voltage
Collector cut-off current
V_(BR)EBO I_E=-50μA, I_C=0
I_CBO
V_CB=-20 V , I_E=0
-5
V
-1
μA
Emitter cut-off current
I_EBO
V_EB=-4 V , I_C=0
-1
μA
DC current gain *
h_FE
V_CE=-3V, I_C= -0.5A
82
390
Collector-emitter saturation voltage *
Transition frequency
Output capacitance
* Measured using pulse current.
CLASSIFICATION OF h_FE
Rank
Range
Marking
P
82-180
BCP
V_CE(sat)
f_T
C_ob
I_C=-2A, I_B= -0.2A
V_CE=-5V, I_C=-0.5A ,f=30MHz
V_CB=-10V, I_E=0 ,f=1MHz
Q
120-270
BCQ
-0.8
V
100
MHz
50
pF
R
180-390
BCR
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