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| 2SB1132 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor | |||
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TRANSISTOR (PNP)
2SB1 1 32
FEATURES
z Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA
z Compliments 2SD1664
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Power Dissipation
TJ
Junction Temperature
Tstg
Storage Temperature
Value
-40
-32
-5
-1
500
150
-55-150
Units
V
V
V
A
mW
â
â
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-50μA,IC=0
ICBO
VCB=-20V,IE=0
IEBO
VEB=-4V,IC=0
hFE
VCE=-3V,IC=-100mA
VCE(sat) IC=-500mA,IB=-50mA
fT
VCE=-5V,IC=-50mA,f=30MHz
Cob
VCB=-10V,IE=0,f=1MHz
MIN TYP MAX UNIT
-40
V
-32
V
-5
V
-0.5 μA
-0.5 μA
82
390
-0.2 -0.5
V
150
MHz
20
30
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
BAP
Q
120-270
BAQ
R
180-390
BAR
JinYu
semiconductor
www.htsemi.com
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