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| 2SB1119 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – LF Amp,Electronic Governor Applications | |||
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2SB1 1 1 9
TRANSISTOR(PNP)
SOT-89-3L
FEATURES
z Small Flat Package
z LF Amplifier, Electronic Governor Applications
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-25
-25
-5
-1
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC=-10µA,IE=0
-25
V
V(BR)CEO IC=-1mA,IB=0
-25
V
V(BR)EBO IE=-10µA,IC=0
-5
V
ICBO
VCB=-20V,IE=0
-100
nA
IEBO
VEB=-4V,IC=0
-100
nA
hFE(1)
VCE=-2V, IC=-50mA
100
560
hFE(2)
VCE=-2V, IC=-1A
40
VCE(sat) IC=-500mA,IB=-50mA
-0.7
V
VBE(sat) IC=-500mA,IB=-50mA
-1.2
V
Cob
VCB=-10V,IE=0, f=1MHz
25
pF
fT
VCE=-10V,IC=-50mA,
180
MHz
CLASSIFICATION OF hFE(1)
RANK
R
RANGE
100â200
MARKING
S
140â280
T
200â400
BB
U
280â560
JinYu
semiconductor
www.htsemi.com
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