2SA1873 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

DUAL TRANSISTOR (PNP+ PNP)
Features
z Small package (dual type)
z High voltage and high current
z High h_FE
z Excellent h_FE linearity
z Complementary to 2SC4944
MARKING: SY SGR
2SA1873
SOT-353
1
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-150
200
150
-55 to150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
Test conditions
I_C=-100μA,I_E=0
I_C=-1mA,I_B=0
I_E=-10μA,I_C=0
V_CB=-50V,I_E=0
V_EB=-5V,I_C=0
V_CE=-6V,I_C=-2mA
I_C=-100mA,I_B=-10mA
V_CE=-10V,I_C=-1mA
V_CB=-10V,I_E=0,f=1MHz
CLASSIFICATION OF h_FE
Rank
Range
Marking
Y
120-240
SY
Min
Typ Max Unit
-50
V
-50
V
-5
V
-0.1 μA
-0.1 μA
120
400
-0.3
V
80
MHz
7
pF
GR
200-400
SGR
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05