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| 2SA1661 Datasheet, PDF (1/1 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP) | |||
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2SA1 661
TRANSISTOR(PNP)
SOT-89-3L
FEATURES
z Small Flat Package
z High Current Application
z High Voltage
z High Transition Frequency
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-0.8
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
Cob
IC= -1mA,IE=0
IC=-10mA,IB=0
IE=-1mA,IC=0
VCB=-120V,IE=0
VEB=-5V,IC=0
VCE=-5V, IC=-100mA
IC=-500mA,IB=-50mA
VCE=-5V, IC=-500mA
VCB=-10V,IE=0, f=1MHz
-120
-120
-5
80
V
V
V
-100
nA
-100
nA
240
-1
V
-1
V
30
pF
VCE=-5V,IC=-0.1A,
fT
f=30MHz
120
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
80â160
DO.
Y
120â240
DY.
JinYu
semiconductor
www.htsemi.com
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