2SA1586 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

2SA1 58 6
TRANSISTOR(PNP)
FEATURES
 High DC Current Gain
 High Voltage and High Current.
 Complementary to 2SC4116
 Small Package
APPLICATIONS
 General Purpose Amplification.
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
-50
VCEO Collector-Emitter Voltage
-50
VEBO Emitter-Base Voltage
-5
IC
Collector Current
-150
PC
Collector Power Dissipation
100
RΘJA Thermal Resistance From Junction To Ambient
1250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
SOT–323
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Test conditions
IC=-100µA, IE=0
IC=-1mA, IB=0
IE=-100µA, IC=0
VCB=-50V, IE=0
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V,Ic=-1mA
VCB=-10V, IE=0, f=1MHz
Min
Typ
-50
-50
-5
70
80
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
70–140
SO
Y
120–240
SY
GR(G)
200–400
SG
Max
-100
-100
400
-0.3
7
Unit
V
V
V
nA
nA
V
MHz
pF
JinYu
semiconductor
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