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| 2SA1579 Datasheet, PDF (1/2 Pages) Rohm – High-voltage Amplifier Transistor (-120V, -50mA) | |||
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2SA1 57 9
TRANSISTOR(PNP)
SOT-323
FEATURES
z High breakdown voltage. (BVCEO = -120V)
z Complements the 2SC4102
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-120
-120
-5
-50
100
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-50μA,IC=0
ICBO
VCB=-100V,IE=0
IEBO
VEB=-4V,IC=0
hFE
VCE=-6V,IC=-2mA
VCE(sat) IC=-10mA,IB=-1mA
fT
VCE=-12V,IC=-2mA,f=30MHz
Cob
VCB=-12V,IE=0,f=1MHz
MIN TYP MAX UNIT
-120
V
-120
V
-5
V
-0.5 μA
-0.5 μA
180
560
-0.5
V
140
MHz
3.2
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
R
180-390
RR
S
270-560
RS
JinYu
semiconductor
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