2SA1298 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (LOW FREQUENCY POWER AMPLIFIER, SWITCHING APPLICATIONS)

2SA1 298
TRANSISTOR(PNP)
FEATURES
 Low Frequency Power Amplifier Application
 Power Swithing Applications
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
Tj
Tstg
Parameter
Value
Collector-Base Voltage
-35
Collector-Emitter Voltage
-30
Emitter-Base Voltage
-5
Collector Current
-800
Collector Power Dissipation
200
Thermal Resistance From Junction To Ambient
625
Junction Temperature
150
Storage Temperature
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE
fT
Cob
Test conditions
IC=-1mA, IE=0
IC=-10mA, IB=0
IE=-1mA, IC=0
VCB=-30V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-500mA, IB=-20mA
VCB=-1V,IC=-10mA,
VCE=-5V,IC=-10mA
VCB=-10V, IE=0, f=1MHz
SOT–23
1. BASE
2. EMITTER
3. COLLECTOR
Min
Typ
Max
-35
-30
-5
-0.1
-0.1
100
320
40
-0.5
-0.8
-0.5
120
13
Unit
V
V
V
μA
μA
V
V
MHz
pF
CLASSIFICATION OF h_FE(1)
RANK
RANGE
MARKING
O
100–200
IO
Y
160–320
IY
JinYu
semiconductor
www.htsemi.com