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| 2SA1203 Datasheet, PDF (1/1 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) | |||
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2SA1 203
TRANSISTOR(PNP)
FEATURES
z Complementary to 2SC2883
z Small Flat Package
z Audio Frequency Amplifier Application
SOT-89-3L
1. BASE
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-30
-30
-5
-1.5
500
250
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -1mA,IE=0
-35
V
V(BR)CEO IC=-10mA,IB=0
-30
V
V(BR)EBO IE=-1mA,IC=0
-5
V
ICBO
VCB=-30V,IE=0
-100
nA
IEBO
VEB=-5V,IC=0
-100
nA
hFE
VCE=-2V, IC=-500mA
100
320
VCE(sat) IC=-1.5A,IB=-30mA
-2
V
VBE
VCE=-2V, IC=-500mA
-1
V
Cob
VCB=-10V,IE=0, f=1MHz
50
pF
fT
VCE=-2V,IC= -500mA
120
MHz
CLASSIFICATION OF hFE
RANK
RANGE
MARKING
O
100â200
HO1
Y
160â320
HY1
JinYu
semiconductor
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