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| 2SA1201 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS) | |||
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2SA1 201
TRANSISTOR(PNP)
SOT-89
FEATURES
z High voltage
z High transition frequency
z Complementary to 2SC2881
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.8
A
PC
Collector Power Dissipation
0.5
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
â
-55-150
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Symbol Test conditions
MIN TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-1mA,IE=0
-120
V
Collector-emitter breakdown voltage
V(BR)CEO IC=-10mA,IB=0
-120
V
Emitter-base breakdown voltage
V(BR)EBO IE=-1mA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-120V,IE=0
-0.1 μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1 μA
DC current gain
hFE
VCE=-5V,IC=-100mA
80
240
Collector-emitter saturation voltage
VCE(sat) IC=-500mA,IB=-50mA
-1
V
Base-emitter voltage
VBE
VCE=-5V,IC=-500mA
-1
V
Transition frequency
fT
VCE=-5V,IC=-100mA
120
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
30
pF
CLASSIFICATION OF hFE
Rank
Range
Marking
O
80-160
DO
Y
120-240
DY
JinYu
semiconductor
www.htsemi.com
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