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| 2SA1179 Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP) | |||
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2SA1 1 7 9
TRANSISTOR(PNP)
SOT-23
FEATURES
. High breakdown voltage
MARKING: M
MAXIMUM RATINGS (TA=25â unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
Pc
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-55
-50
-5
-150
200
150
-55-150
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-10u A,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-10 u A,IC=0
ICBO
VCB=-35V,IE=0
IEBO
VEB=-4V,IC=0
hFE
VCE=-6V,IC=-1mA
VCE(sat) IC=-50mA,IB=-5mA
VBE(sat) IC=-50mA,IB=-5mA
fT
VCE=-6V,IC=-10mA
Cob
VCB=-6V,IE=0,f=1MHz
MIN TYP MAX UNIT
-55
V
-50
V
-5
V
-0.1 u A
-0.1 u A
200
400
-0.5
V
-1.0
V
180
MHz
4
pF
JinYu
semiconductor
www.htsemi.com
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