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| 2SA1162 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) | |||
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2SA1 1 62
TRANSISTOR(PNP)
SOT-23
FEATURES
. Low noise : NF= 1dB(Typ.),10dB (Max.)
. Complementary to 2SC2712.
. Small Package.
MARKING: SO , SY , SG
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-50
-50
-5
-150
150
125
-55-125
Units
V
V
V
mA
mW
â
â
ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol Test conditions
V(BR)CBO IC=-100u A,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-100 u A,IC=0
ICBO
VCB=-50V,IE=0
IEBO
VEB=-5V,IC=0
hFE
VCE=-6V,IC=-2mA
VCE(sat) IC=-100mA,IB=-10mA
fT
VCE=-10V,IC=-1mA
Cob
VCB=-10V,IE=0,f=1MHz
VCE=-6V,Ic=0.1mA,
NF
f=1KHZ,Rg=10Kâ¦
MIN TYP MAX UNIT
-50
V
-50
V
-5
V
-0.1 u A
-0.1 u A
70
400
-0.3
V
80
MHz
7
pF
10
dB
CLASSIFICATION OF hFE
Rank
Range
O
70-140
Y
120-240
GR(G)
200-400
JinYu
semiconductor
www.htsemi.com
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