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2SA1037 Datasheet, PDF (1/2 Pages) TRANSYS Electronics Limited – Plastic-Encapsulated Transistors
2SA1 037
TRANSISTOR(PNP)
SOT-23
FEATURES
∙ Excellent hFE linearity.
∙ Complments the 2SC2412
MARKING : FQ, FR, FS
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-60
-50
-6
150
200
150
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Units
V
V
V
mA
mW
℃
℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=-50μA,IE=0
V(BR)CEO IC=-1mA,IB=0
V(BR)EBO IE=-50μA,IC=0
ICBO
VCB=-60V,IE=0
IEBO
VEB=-6V,IC=0
hFE
VCE=-6V,IC=-1mA
VCE(sat) IC=-50mA,IB=-5mA
fT
VCE=-12V,IC=-2mA,f=30MHz
Cob
VCB=-12V,IE=0,f=1MHz
MIN TYP MAX UNIT
-60
V
-50
V
-6
V
-0.1 μA
-0.1 μA
120
560
-0.5
V
140
MHz
4.0
5.0
pF
CLASSIFICATION OF hFE
Rank
Range
Q
120 - 270
R
180 - 390
S
270 - 560
JinYu
semiconductor
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