1SS401 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATIONS)

Schottoky DIODES
FEATURES
Low forward voltage : V_F=0.38V(typ.)
Low reverse current : I_R=50uA(max)
Small total capacitance : C_T =46pF(typ.)
1SS4 01
SOT-323
1.ANODE
2. NC
3. CATHODE
MARKING:
Maximum Ratings @T_A=25℃
Parameter
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Junction temperature
Storage temperature range
Symbol
V_RM
V_RRM
V_RWM
V_R
I_FM
I_O
Pd
T_J
T_STG
Limits
25
20
700
300
100
125
-55-125
Electrical Characteristics @T_A=25℃
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Symbol
V _(BR)R
V_F1
V_F2
V_F3
I_R
C_T
Min.
20
Typ.
0.16
0.22
0.38
46
Max. Unit
V
V
V
0.45
V
50
uA
pF
JinYu
semiconductor
www.htsemi.com
Unit
V
V
mA
mA
mW
℃
℃
Conditions
I_R=100μA
I_F=1mA
I_F=10mA
I_F=300mA
V_R=20V
V_R=0,f=1MHz