H10N60 Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power MOSFET (600V,10A)

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date : 2009.08.05
Page No. : 3/5
12
10V
6V
10
5V
8
Ta=25℃
6
4
4V
2
0
0
2
4
6
8 10 12 14 16
VDS,Drain-to-source Voltage(V)
Fig 1.Typical Output Characteristics
6
10V
6V
5 Ta=150_℃
5V
4
4V
3
2
1
0
0
2
4
6
8 10 12 14 16
VDS,Drain-to-source Voltage(V)
Fig 2.Typical Output Characteristics
1
0.9
0.8
0.7
0.6
0.5
0.4
0
VGS=10V
2
4
6
8
10
12
ID Drain,Current(A)
Fig 3.Typical On-Resistance & Drain Current
1.8
1.6
1.4
ID=10A
VGS=10V
1.2
1
0.8
0.6
0.4
0.2
0
-50
0
50
100
150
Tj,Junction Temperature(_℃)
Fig 4.Normalized On-Resistance v.s.Junction
100
10
Tj=150℃
Tj=25℃
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1
1.2
VSD,Source-to-Drain Voltage(V)
Fig 5.Forward Characteristic of Reverse Diode
H10N60 Series
4
3.5
3
2.5
2
1.5
1
-50
0
50
100
150
Tj,Junction Temperature(_℃)
Fig 6.Gate Threshold Voltage v.s.junction
HSMC Product Specification