H03N60 Datasheet, PDF (3/5 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power Field Effect Transistor

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : MOS200602
Issued Date : 2006.02.01
Revised Date : 2006.02.07
Page No. : 3/5
10
9
8
7
6
5
4
3
2
1
0
0
On-Region Characteristic
VGS=8V
VGS=10V
VGS=6V
VGS=5V
VGS=4V
2
4
6
8
10
VDS, Drain-Source Voltage (V)
1000
800
600
400
200
0
0.1
Capacitance Characteristics
Ciss
Crss
Coss
1
10
100
VDS, Deain-Source Voltage (V)
Typical On-Resistance & Drain Current
6.0
5.5
5.0
VGS=10V
4.5
4.0
3.5
3.0
2.5
2.0
0
1
2
3
4
5
6
ID, Drain Current (A)
Gate Charge Waveforms
12
10
8
6
4
2
0
0
1
2
3
4
5
Q, Gate Charge (nC)
H03N60E, H03N60F
Drain Current Variation with
Gate Voltage and Temperature
6
VDS=10 V
TC= 25^oC
5
4
3
2
1
0
0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-Source Voltage (V)
Maximum Safe Operating Area
10
VDS=200V
1
1ms
10ms
100ms
0.1
10
100
VDS, Drain-Source Voltage (V)
1000
HSMC Product Specification