HTL295I Datasheet, PDF (2/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 2000.12.21
Revised Date : 2001.03.23
Page No. : 2/3
Current Gain & Collector Current
1000
Sasturation Voltage & Collector Current
100000
10000
100
hFE @ VCE=10V
1000
100
VCE(sat) @ IC=20IB
VCE(sat) @ IC=10IB
10
0.1
1
10
100
Collector Current-IC (mA)
1000
10
1
10
100
Collector Current-IC (mA)
1000
Saturation Voltage & Collector Current
1000
VBE(sat) @ IC=10IB
Capacitance & Reverse-Biased Voltage
100
Cob
10
100
1
10
100
Collector Current-IC (mA)
Safe Operating Area
10
PT=1mS
1
PT=100mS
PT=1S
0.1
1000
0.01
1
HTL295I
10
100
Forward Biased Voltage-VCE (V)
1000
1
0.1
1.2
1
0.8
0.6
0.4
0.2
0
0
1
10
100
Reverse Biased Voltage (V)
Power Derating
50
100
150
200
Ta(^oC) , Ambient Temperature
HSMC Product Specification