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HIRF840 Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – N-Channel Power MOSFET
◁
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200505
Issued Date : 2005.06.01
Revised Date : 2005.06.08
Page No. : 2/4
ELectrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Characteristic
V(BR)DSS Drain-Source Breakdown Voltage (VGS=0V, ID=250uA)
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient (Reference to 25oC, ID=1mA)
IDSS
Drain-Source Leakage Current (VDS=500V, VGS=0V)
Drain-Source Leakage Current (VDS=400V, VGS=0V, Tj=125°C)
IGSSF
Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V)
IGSSR
Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V)
VGS(th)
Gate Threshold Voltage (VDS=VGS, ID=250uA)
RDS(on) Static Drain-Source On-Resistance (VGS=10V, ID=4.8A)(*4)
gFS
Forward Transconductance (VDS=50V, ID=4.8A)(*4)
Ciss
Input Capacitance
Coss
Output Capacitance
VDS=25V, VGS=0V, f=1MHz
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
(VDD=250V, ID=8A, RG=9.1Ω,
RD=31Ω)(*4)
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(VDS=400V, ID=8A, VGS=10V)
(*4)
LD
Internal Drain Inductance (Measured from the drain lead 0.25” from
package to center of die)
LS
Internal Source Inductance (Measured from the drain lead 0.25” from
package to source bond pad)
*4: Pulse Test: Pulse Width≤300us, Duty Cycle≤2%
Min. Typ. Max. Unit
500 -
-
V
- 0.78 - V/oC
-
- 25 uA
250 uA
-
- 100 nA
-
- -100 nA
2
-
4V
-
- 0.85 Ω
4.9 -
-
S
- 1300 -
- 310 - pF
- 120 -
- 14 -
- 23 -
ns
- 49 -
- 20 -
-
- 63
-
- 9.3 nC
-
- 32
- 4.5 - nH
- 7.5 - nH
Source-Drain Diode
Symbol
Characteristic
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
trr
Reverse Recovery Time
VSD
Diode Forward Voltage
**: Negligible, Dominated by circuit inductance
IF=8A, di/dt=100A/us, Tj=25°C (*4)
IS=8A, VGS=0V, Tj=25°C (*4)
Min.
-
-
-
-
Typ. Max. Units
4.2 8.9 uC
**
-
460 970 ns
-
2
V
HIRF840, HIRF840F
HSMC Product Specification
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