HD122 Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL SILION DARLINGTON TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 1998.12.01
Revised Date : 2000.10.01
Page No. : 2/4
10000
Collector Gain & Collector Current
10000
Sturation Voltage & Collector Current
1000
25°C hFE @ VCE=4V
100
-40°C hFE @ VCE=4V
10
1000
-40°C VCE(sat) @ IC=100IB
25°C VCE(sat) @ IC=100IB
1
1
10
100
1000
10000
Collector Current-IC (mA)
100
100
1000
Collector Current-IC (mA)
10000
10000
Sturation Voltage & Collector Current
10000
On Voltage & Collector Current
1000
-40¢XC VBE(sat) @ IC=100IB
25¢XC VBE(sat) @ IC=100IB
1000
-40¢XC VBE(on) @ VCE=4V
25¢XC VBE(on) @ VCE=4V
100
100
1000
Collector Current-IC (mA)
10000
Switching Time & Collector Current
10
VCC=30V, IC=250, IB1= -250IB2
1
0.1
1
Tstg
Tf
Ton
10
Collector Current-IC (A)
100
10
100
1000
Collector Current-IC (mA)
10000
Capacitance & Reverse-Biased Voltage
1000
100
10
0.1
Cob
1
10
100
Reverse-Biased Voltage (V)
HSMC Product Specification