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| HBT139DE Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – Three Quadrant Triac | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
Static Characteristics (Ta=25°C)
Symbol
Parameter
Conditions
IGT Gate Trigger Current
IL
Latching Current
IH Holding Current
VT On-state Voltage
VGT Gate Trigger Voltage
ID Off-state Leakage Current
VD=6V, RL=10â¦, T2+ G+
VD=6V, RL=10â¦, T2+ G-
VD=6V, RL=10â¦, T2- G-
VD=6V, RL=10â¦, T2- G+
VD=6V, RL=10â¦, T2+ G+
VD=6V, RL=10â¦, T2+ G-
VD=6V, RL=10â¦, T2- G-
VD=6V, RL=10â¦, T2- G+
VD=12V, IGT=0.1A
IT=25A
VD=6V, RL=10â¦, T2+ G+
VD=6V, RL=10â¦, T2+ G-
VD=6V, RL=10â¦, T2- G-
VD=6V, RL=10â¦, T2- G+
VD=VDRM
Static Characteristics
Symbol
dVD/dt
tgt
Parameter
Critical rate of rise of
off-state voltage
Gate controlled turn-on
time
Conditions
VDM=67% VDRM(max);
Tj= 125°C; exponential
waveform; gate open circuit
ITM=6A; VD=VDRM(max);
IG=0.1A; dIG/dt=5A/us
Thermal Resistances
Symbol
Rth j-mb
Rth j-a
Parameter
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
Conditions
Full cycle
Half cycle
In free air
Spec. No. : HE200308
Issued Date : 2003.11.01
Revised Date : 2003.11.28
Page No. : 2/4
Rank
Unit
V
25
mA
25
mA
25
mA
-
mA
20
mA
30
mA
30
mA
-
mA
30
mA
1.5
V
1.5
V
1.5
V
1.5
V
-
V
500
uA
Min. Typ. Max. Unit
-
50
- V/us
-
2
-
us
Min. Typ. Max. Unit
-
-
1.2 K/W
-
-
1.7 K/W
-
60
- K/W
HBT139XE
HSMC Product Specification
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