H2N5551 Datasheet, PDF (2/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 2/4
Current Gain & Collector Current
1000
125^oC
25^oC
100
75^oC
10
hFE @ VCE=5V
100000
10000
Saturation Voltage & Collector Current
VCE(sat) @ IC=10IB
1000
100
125^oC
75^oC
25^oC
1
1
10
100
1000
Collector Current-IC (mA)
10
0.1
1
10
100
Collector Current-IC (mA)
1000
Saturation Voltage & Collector Current
1000
25^oC
125^oC
75^oC
100
0.1
VBE(sat) @ IC=10IB
1
10
100
Collector Current-IC (mA)
1000
Cutoff Frequency & Collector Current
1000
100
VCE=10V
10
1
H2N5551
10
100
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
10
1
0.1
10000
1000
100
10
1
1
Cob
1
10
100
Reverse Biased Voltage (V)
1000
Safe Operating Area
PT=1ms
PT=100ms
PT=1s
10
100
Forward Biased Voltage-VCE (V)
1000
HSMC Product Specification