HTL195 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6452
Issued Date : 1993.02.10
Revised Date : 2002.04.18
Page No. : 1/3
HTL195
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL195 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
TO-92
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ....................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... -500 V
VCEO Collector to Emitter Voltage ................................................................................... -500 V
IC Collector Current ...................................................................................................... -300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO -500
-
BVCEO -500
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1 -
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
50
-
*hFE2
50
-
*hFE3
40
-
fT
10
-
Cob
-
-
Max.
-
-
-10
-1
-200
-500
-3
-900
-
300
-
-
30
Unit
V
V
uA
uA
nA
mV
V
mV
MHz
pF
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
VCB=-500V, IE=0
VCE=-100V, IB=0
VEB=-6V, IC=0
IC=-20mA, IB=-2mA
IC=-80mA, IB=-4mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HTL195
HSMC Product Specification