HTL194 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6549-B
Issued Date : 1993.04.12
Revised Date : 2000.10.01
Page No. : 1/3
HTL194
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL194 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ..................................................................................... -400 V
VCEO Collector to Emitter Voltage .................................................................................. -400 V
IC Collector Current ...................................................................................................... -300 mA
Characteristics (Ta=25°C)
Symbol
Min. Typ.
BVCBO
-400
-
BVCEO
-400
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
50
-
*hFE2
50
-
*hFE3
40
-
fT
10
-
Cob
-
-
Max.
-
-
-10
-1
-0.2
-200
-1.2
-900
-
300
-
-
30
Unit
Test Conditions
V
V
uA
uA
uA
mV
V
mV
MHz
pF
IC=-100uA, IE=0
IC=-1mA, IB=0
VCB=-400V, IE=0
VCE=-200V, IE=0
VEB=-6V, IC=0
IC=-20mA, IB=-2mA
IC=-80mA, IB=-4mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-20mA
VCE=-10V, IC=-80mA
VCE=-20V, IE=-10mA, f=1MHz
VCB=-20V, f=1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification