HTL145 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6454-B
Issued Date : 1993.02.24
Revised Date : 2000.10.01
Page No. : 1/3
HTL145
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTL145 is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ..................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ...................................................................................... 1 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 500 V
VCEO Collector to Emitter Voltage ................................................................................... 500 V
IC Collector Current ....................................................................................................... 300 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
500
-
BVCEO
500
-
ICBO
-
-
ICER
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(sat)
-
-
*hFE1
50
-
*hFE2
50
-
*hFE3
40
-
fT
10
-
Cob
-
-
Max.
-
-
10
1
200
500
3
900
-
300
-
-
30
Unit
Test Conditions
V
V
uA
uA
nA
mV
V
mV
MHz
pF
IC=100uA
IC=1mA
VCB=500V
VCE=200V
VEB=6V
IC=20mA, IB=2mA
IC=100mA, IB=4mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=20mA
VCE=10V, IC=80mA
VCE=20V, IE=10mA
VCB=20V, f=1MHZ
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification