HTIP50 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6761
Issued Date : 1994.10.06
Revised Date : 2002.02.26
Page No. : 1/3
HTIP50
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP50 is designed for line operated audio output amplifier
switch-mode power supply drivers and other switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 500 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
500
-
BVCEO
400
-
BVEBO
5
-
IEBO
-
-
ICEO
-
-
ICES
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
30
-
*hFE2
10
-
fT
10
-
Max.
-
-
-
1
1
1
1
1.5
150
-
-
Unit
Test Conditions
V
V
V
mA
mA
mA
V
V
MHz
IC=1mA, IE=0
IC=30mA, IB=0
IE=0.1mA, IC=0
VEB=5V, IC=0
VCE=300V, IB=0
VCE=500V, VEB=0
IC=1A, IB=0.2A
IC=1A, VCE=10V
IC=0.3A, VCE=10V
IC=1A, VCE=10V
IC=0.2A, VCB=10V, f=2MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HTIP50
HSMC Product Specification