HTIP47 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6726-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
HTIP47
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP47 is designed for high voltage switch switching
applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................. -50 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................... 350 V
BVCEO Collector to Emitter Voltage................................................................................. 250 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
350
-
BVCEO
250
-
BVEBO
5
-
IEBO
-
-
ICEO
-
-
ICES
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
30
-
*hFE2
10
-
fT
10
-
Max.
-
-
-
1
1
1
1
1.5
150
-
-
Unit
Test Conditions
V
V
V
mA
mA
mA
V
V
MHz
IC=1mA
IC=30mA
IE=0.1mA
VEB=5V
VCE=150V
VCE=350V
IC=1A, IB=0.2A
IC=1A, VCE=10V
IC=0.3A, VCE=10V
IC=1A, VCE=10V
IC=0.2A, VCE=10V, f=2MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification