HTIP32C Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6724
Issued Date : 1993.01.13
Revised Date : 2002.01.17
Page No. : 1/3
HTIP32C
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP32C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature............................................................................................. -55 ~ +150 °C
Junction Temperature..................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 40 W
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................. -100 V
BVEBO Emitter to Base Voltage........................................................................................... -5 V
IC Collector Current.............................................................................................................. -3 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-100
-
BVCEO
-100
-
ICES
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
25
45
*hFE2
10
-
fT
3
-
Max.
-
-
-200
-300
-1
-1.2
-1.8
-
50
-
Unit
Test Conditions
V
V
uA
uA
mA
V
V
MHz
IC=-1mA, IE=0
IC=-30mA, IB=0
VCE=-100V
VCE=-60V
VEB=-5V
IC=-3A, IB=-375mA
IC=-3A, VCE=-4V
IC=-1A, VCE=-4V
IC=-3A, VCE=-4V
IC=-0.5A, VCE=-10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HTIP32C
HSMC Product Specification