HTIP29C Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6768
Issued Date : 1994.07.29
Revised Date : 2002.02.20
Page No. : 1/3
HTIP29C
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP29C is designed for use in general purpose amplifier and
switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ..................................................................................... 30 W
Total Power Dissipation (Ta=25°C) ....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 100 V
BVCEO Collector to Emitter Voltage.................................................................................. 100 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 1 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
ICES
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
40
-
*hFE2
15
-
fT
3
-
Max.
-
-
200
300
1
0.7
1.3
-
75
-
Unit
Test Conditions
V
V
uA
uA
mA
V
V
MHz
IC=1mA, IE=0
IC=30mA, IB=0
VCE=100V, IB=0
VCE=60V, IB=0
VEB=5V
IC=1A, IB=125mA
IC=1A, VCE=4V
IC=0.2A, VCE=4V
IC=1A, VCE=4V
IC=0.2A, VCE=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HTIP29C
HSMC Product Specification