HTIP125 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6730-B
Issued Date : 1997.08.13
Revised Date : 1999.08.01
Page No. : 1/3
HTIP125
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP125 is designed for medium power linear and switching
applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 65 W
Total Power Dissipation (Ta=25°C) ...................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ..................................................................................... -60 V
BVCEO Collector to Emitter Voltage.................................................................................. -60 V
BVEBO Emitter to Base Voltage .......................................................................................... -5 V
IC Collector Current ............................................................................................................. -5 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-60
-
*BVCEO
-60
-
ICEO
-
-
ICBO
-
-
IEBO
-
-
*VCE(sat1)
-
-
*VCE(sat)2
-
-
*VBE(on)
-
-
*hFE1
1000
-
*hFE2
1000
-
Cob
-
-
Max.
-
-
-0.5
-0.2
-2
-2
-4
-2.5
-
-
300
Unit
Test Conditions
V
IC=-1mA, IE=0
V
IC=-100mA, IB=0
mA VCE=-30V, IE=0
mA VCE=-60V, IB=0
mA VEB=-5V, IC=0
V
IC=-3A, IB=-12mA
V
IC=-5A, IB=-20mA
V
IC=-3A, VCE=-3V
IC=-0.5A, VCE=-3V
IC=-3A, VCE=-3V
FP VCB=-10V, f=0.1MHz, IE=0
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification