HTIP122 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 1/4
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP122 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 65 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 100 V
BVCEO Collector to Emitter Voltage .............................................................................................. 100 V
BVEBO Emitter to Base Voltage ....................................................................................................... 5 V
IC Collector Current (Continuous)...................................................................................................... 5 A
IC Collector Current (Peak)................................................................................................................ 8 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
*BVCEO
100
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(on)
-
-
*hFE1
1
-
*hFE2
1
-
Cob
-
-
Darlington Schematic
Max.
-
-
200
500
2
2
4
2.5
-
-
200
Unit
Test Conditions
V
IC=1mA, IE=0
V
IC=100mA
uA
VCB=100V
uA
VCE=50V
mA VEB=5V
V
IC=3A, IB=12mA
V
IC=5A, IB=20mA
V
IC=3A, VCE=3V
K
IC=0.5A, VCE=3V
K
IC=3A, VCE=3V
pF
VCB=10V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
C
B
HTIP122
R1
R2
E
HSMC Product Specification