HTIP112 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE200203
Issued Date : 2000.08.01
Revised Date : 2002.03.28
Page No. : 1/4
HTIP112
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP112 is designed for use in general purpose amplifier and low-
speed switching applications.
Absolute Maximum Ratings (Ta=25°C)
TO-220
• Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 50 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ................................................................................................. 100 V
BVCEO Collector to Emitter Voltage .............................................................................................. 100 V
BVEBO Emitter to Base Voltage ....................................................................................................... 5 V
IC Collector Current (Continue) ......................................................................................................... 4 A
IC Collector Current (Peak)................................................................................................................ 6 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
100
-
BVCEO
100
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
-
*VBE(on)
-
-
*hFE1
1
-
*hFE2
500
-
Cob
-
-
Darlington Schematic
Max.
-
-
1
2
2
2.5
2.8
-
-
200
Unit
Test Conditions
V
IC=1mA
V
IC=30mA
mA VCB=100V
mA VCE=50V
mA VEB=5V
V
IC=2A, IB=8mA
V
IC=2A, VCE=4V
K
IC=1A, VCE=4V
IC=2A, VCE=4V
pF
VCB=10V, f=0.1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
C
B
HTIP112
R1
R2
E
HSMC Product Specification