HTIP105 Datasheet, PDF (1/3 Pages) Hi-Sincerity Mocroelectronics – PNP EPITAXIAL PLANAR TRANSISTOR

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6743
Issued Date : 1998.07.01
Revised Date : 2001.08.30
Page No. : 1/3
HTIP105
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP105 is designed for monolithic construction with built in base-
emitter shunt resistors industrial.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................................... 80 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage .................................................................................................... -60 V
BVCEO Collector to Emitter Voltage................................................................................................. -60 V
BVEBO Emitter to Base Voltage ......................................................................................................... -5 V
IC Collector Current ............................................................................................................................ -8 A
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-60
-
BVCEO
-60
-
BVEBO
-5
-
ICEO
-
-
ICBO
-
-
IEBO
-
-
*VCE(sat)1
-
-
*VCE(sat)2
-
-
*VBE(on)
-
-
*hFE1
1000
-
*hFE2
200
-
Cob
-
-
Darlington Schematic
Max.
-
-
-
-50
-50
-8
-2
-2.5
-2.8
20000
-
300
Unit
Test Conditions
V
IC=-1mA
V
IC=-30mA
V
IE=-0.1mA
uA
VCE=-30V
uA
VCB=-60V
mA VEB=-5V
V
IC=-3A, IB=-6mA
V
IC=-8A, IB=-80mA
V
IC=-8A, VCE=-4V
IC=-3A, VCE=-4V
IC=-8A, VCE=-4V
pF
VCE=-10V, f=100KHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
C
B
HTIP105
R1
R2
E
HSMC Product Specification