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| HT666 Datasheet, PDF (1/4 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HT666
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HE6464
Issued Date : 1993.09.07
Revised Date : 2005.02.15
Page No. : 1/4
Description
The HT666 is designed for general purpose amplifier and high-speed,medium-
power switching applications.
Features
⢠High Frequency Current Gain
⢠High Speed Switching Transistor
TO-92
Absolute Maximum Ratings
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ............................................................................................................... 625 mW
⢠Maximum Voltages and Currents (TA=25°C)
BVCBO Collector to Base Voltage......................................................................................................................... 75 V
BVCEO Collector to Emitter Voltage...................................................................................................................... 40 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 6 V
IC Collector Current ........................................................................................................................................ 600 mA
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
*BVCEO
BVEBO
ICBO
ICEX
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
*hFE6
fT
Min.
Typ.
Max.
75
-
-
40
-
-
6
-
-
-
-
10
-
-
10
-
-
50
-
-
300
-
-
1
-
-
1.2
-
-
2
35
-
-
50
-
-
75
-
-
100
300
40
-
-
50
-
-
300
-
-
HT666
Unit
V
V
V
nA
nA
nA
mV
V
V
V
-
-
-
-
-
-
MHz
Test Conditions
IC=10uA
IC=100mA
IE=10uA
VCB=60V
VCB=60V, VEB(off)=3V
VEB=3V
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=100uA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=1V, IC=150mA
IC=20mA, VCE=20V, f=100MHz
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HSMC Product Specification
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