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| HT112 Datasheet, PDF (1/5 Pages) Hi-Sincerity Mocroelectronics – NPN EPITAXIAL PLANAR TRANSISTOR | |||
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HI-SINCERITY
MICROELECTRONICS CORP.
HT112
NPN EPITAXIAL PLANAR TRANSISTOR
Spec. No. : HT200101
Issued Date : 2000.05.01
Revised Date : 2005.12.02
Page No. : 1/5
Description
The HT112 is designed for use in general purpose amplifier and low-speed
switching applications.
Absolute Maximum Ratings (TA=25°C)
TO-126
⢠Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150 °C
Junction Temperature ................................................................................................................... +150 °C Maximum
⢠Maximum Power Dissipation
Total Power Dissipation (TA=25°C) ................................................................................................................... 1.5 W
Total Power Dissipation (TC=25°C) .................................................................................................................... 30 W
⢠Thermal Resistance
Junction To Case Rθjc................................................................................................................................... 4.2 oC/W
⢠Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................................................... 100 V
BVCEO Collector to Emitter Voltage .................................................................................................................... 100 V
BVEBO Emitter to Base Voltage.............................................................................................................................. 5 V
IC Collector Current ................................................................................................................................................ 4 A
Electrical Characteristics (TA=25°C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
Typ.
Max.
100
-
-
100
-
-
-
-
1
-
-
2
-
-
2
-
-
2.5
-
-
2.8
1
-
-
500
-
-
-
-
100
Unit
Test Conditions
V
IC=1mA
V
IC=30mA
mA
VCB=100V
mA
VCE=50V
mA
VEB=5V
V
IC=2A, IB=8mA
V
IC=2A, VCE=4V
K
IC=1A, VCE=4V
IC=2A, VCE=4V
pF
VCB=10V, IE=0
*Pulse Test: Pulse Width â¤380us, Duty Cycleâ¤2%
HT112
HSMC Product Specification
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